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- Accelorometer: Silicon (50μm – 100μm)
- BAW-Filters: Silicon (100μm – 150μm)
- Display Drivers: Si (780 µm)
- Gallium Arsenide (GaAs 100 – 150 µm)
- Gallium Arsenide (GaAs 150 – 200 µm)
- GaN on Si (200μm >)
- GaN on SiC (50 – 100μm)
- Glass (50 – 100μm)
- Hi-Chiplets: Mold compound (200μm >)
- IC – Analog
- IC – Memory
- IC – Micro – Logic
- IGBT: Si (< 100 µm)
- Indium phosphide (InP 100 – 150 µm)
- Indium phosphide (InP 150 – 200 µm)
- Indium phosphide (InP 50µm – 100 µm)
- LED (bonded): AISi (150 – 200μm)
- LiTaO3
- Logic: Si (280µm)
- MOSFET: Silicon ( <50μm)
- MPU-CPU: Silicon (Si >200µm)
- NAND: 60 (50 Si + 10 DAF) µm
- Opto
- Power Amplifiers: Gallium Arsenide (GaAs 100 – 150 µm)
- Power Discrete
- Printed Circuit Board (PCB)
- Sapphire (100 – 150µm)
- Sapphire (150 – 200µm)
- Sapphire (200μm >)
- Sapphire (50 – 100μm)
- Sapphire Scribing
- SAW-Filters: LiTaO3/LiNbO3
- Sensors
- Silicon (150μm – 200μm)
- Silicon (790μm)
- Silicon Carbide (100μm – 150μm)
- Silicon Carbide (150μm)
- Silicon Carbide (200μm >)
- Silicon Carbide (SiC 150 – 200µm)
- Tuners & Switches: GaAs (110 µm)
- VCSEL: Gallium Arsenide (GaAs 50 – 100 µm)
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