Accelorometer: Silicon (50μm – 100μm)

• Diameter: 150 mm
• Wafer material: 10 µm SiO₂/SiN/Al₂O_{3 –} 60 µm Si – 10 µm DAF
• Thickness: 80 µm
• Die pitch: 500 µm x 500 µm
• Street width: 70 µm

Results

• Process : Dicing-UV-ns # V-Process
• Dicing width: 23 µm
• Burr height: 5 µm
• UPH : 1.7