Gallium Arsenide (GaAs 100 – 150 µm)

• Diameter: 150 mm
• Wafer material: GaAs
• Thickness: 90 µm
• Die pitch: 602 µm x 655 µm
• Street width: 41 µm

Results

• Dicing width: 17 µm
• Burr height: ≈3 µm
• Productivity:  3.3 wafers per hour