Gallium Arsenide (GaAs 150 – 200 µm)

• Diameter: 100 mm
• Wafer material: GaAs
• Thickness: 180 µm
• Die pitch: 210 µm x 210 µm
• Street width: 30 µm

Results

• Dicing width : < 21 µm
• Burr height : < 3 µm