- Diameter: 150 mm
- Wafer material: GaN
- Thickness: 5 µm GaN + 215 µm Si
- Die pitch: 8268 µm x 4804 µm
- Street width: 60 µm
Results
- Process : Grooving-UV-ns # Matrix
- Grooving outer width : 60 µm
- Grooving inner width : 50 ~55 µm
- UPH : 4.5 (150mm wafer)
- UPH : 10 (300mm wafer)