GaN on SiC (50 – 100μm)

• Diameter: 100 mm
• Wafer material: GaAs (Polyimide on top)
• Thickness: 2 µm GaN + 78 µm SiC
• Die pitch: 645 µm x 250 µm
• Street width: 60 µm

Results

• Process : Dicing-UV-ns # MB
• Dicing width : < 25 µm
• Burr height : < 10 µm
• UPH :  2.3