GaN on SiC (50 – 100μm) Diameter: 100 mm Wafer material: GaAs (Polyimide on top) Thickness: 2 µm GaN + 78 µm SiC Die pitch: 645 µm x 250 µm Street width: 60 µm Results Process : Dicing-UV-ns # MB Dicing width : < 25 µm Burr height : < 10 µm UPH : 2.3