IGBT: Si (< 100 µm)

Wafer

• Diameter: 200mm
• Wafer material: Si
• Thickness: 75 µm
• Die pitch: 10557 µm x 10057 µm
• Street width: 182 µm

Results and benefits

• Dicing width: ≤  22 µm
• Burr height: < 3 µm
• Productivity:  12.3