- Diameter: 200 mm
- Wafer material: Silicon
- Thickness: 45 µm + PI layer
- Die pitch: 1640 µm x 1500 µm
- Street width: 22 – 35 µm
Results
- Process : Dicing-UV-ns # VI-Process
- Dicing width: 22 µm
- Burr height: 2 µm pUPH : 5
- Die Strength : Front side: 587 / Back side: 629