- Diameter: 300 mm
- Wafer material: Si
- Thickness: 10 µm Al/Ti/SiO2/SiN – 290 µm Si – 20 µm DAF
- Die pitch: 2780 µm x 3196 µm
- Street width: 80 µm
Results
- Process : Dicing-UV-ns # VI-Process
- Modification width: 64 – 67 µm
- Outer width: 54 – 57 µm
- Inner width: 51 – 53 µm
- Groove depth: > 15 µm
- Burr height: 2 µm (non-metal area), 6 µm (metal area)
- UPH : 1.5