NAND: 60 (50 Si + 10 DAF) µm

Wafer

• Diameter: 300 mm
• Wafer material: Si
• Thickness: 60 (50 Si + 10 DAF) µm
• Die pitch: 7909 µm x 7503 µm
• Street width: 82 µm

Results and benefits

• Kerf width: 10 µm
• Dicing width: 18 to 30 (PI area) µm
• Productivity:  3.5 wafers per hour