Power Amplifiers: Gallium Arsenide (GaAs 100 – 150 µm)

• Diameter: 150 mm
• Wafer material: 85 µm GaAs* + 5 µm Au)
• Thickness: 90 µm
• Front side layers: 0.2 µm InGaP
• Back side layers: 5 µm Au
• Die pitch: 602 µm x 655 µm
• Street width: 40 µm

Results

• Dicing width: 16 µm
• Burr height: <4 µm
• Productivity:  MPW