- Diameter: 300 mm
- Wafer material: Si
- Thickness: 790 µm
- Die pitch: 4279 µm x 12284 µm
- Street width: 73 µm
Results
- Modification width: 50.4 µm
- Outer width: 44.3 µm
- Inner width: 37.1 µm
- Groove depth: > 14.5 µm from PI layer
- Burr height: < 5 µm
- Productivity: 7 wafers per hour