Silicon Carbide (100μm – 150μm)

• Diameter: 100 mm
• Wafer material: SiC
• Thickness: 110 µm
• Die pitch: 920 µm x 4060 µm
• Street width: 120 µm

Results

• Process : Dicing-UV-ns # VI-Process
• Dicing width: 22 µm
• Burr height: < 3 µm
• UPH : 3.9