Silicon Carbide (200μm >)

• Diameter: 150 mm
• Wafer material: SiC
• Thickness: 190 µm SiC + 60 µm silver
• Die pitch: 4490 µm x 4900 µm

Results

• Process : Dicing-UV-ns # MB
• Dicing width: 34 µm
• Burr height:
• UPH : 1.6