Silicon Carbide (SiC 150 – 200µm)

• Diameter: 100 mm
• Wafer material: SiC
• Thickness: 180 µm
• Die pitch: 2250 µm x 2950 µm
• Street width: 80 µm

Results

• Kerf width: 13 µm
• Dicing width: 18 µm
• Burr height: >3 µm
• UPH : 2.9