VCSEL: Gallium Arsenide (GaAs 50 – 100 µm)

• Diameter: 50 mm
• Wafer material: GaAs (Polyimide on top)
• Thickness: 100 µm
• Die pitch: 195 µm x 195 µm
• Street width: 35 µm

Results

• Dicing width : < 21 µm
• Burr height : < 3 µm
• UPH :  5.2