- Dicing-UV is mainly used for Si, SiC, Sapphire, LiNbO3, LiTaO3, Mold compound and GaN materials.
- Dicing-UV with Multi Beam can also been applied as Scribing.
- Dicing-UV Scribing is process were a scribe is made into the wafer substrate of a certain depth. The depth of the scribe into the material depends on the material thickness. Example of 15um deep trench for 150 thick Sapphire
- In a subsequent step a mechanical force is exerted onto the die to propagate the scribe and create a crack. (scribe & break process)
- Scribing is applied to open the active layer and keep a high DIE strength
- The Number of Spots and distance between the spots can be varied.
- Depending on the choice of DOE, the recast width, Burr Heigth, HAZ, UPH and DIE strength will vary.
- Beams with a larger spot to spot distance result in a lower HAZ (heat Affected Zone)
Laser Scribing process explained
With a laser scribing process a scribe is made into the wafer substrate of a certain depth. In a subsequent step a mechanical force is exerted onto the die to propagate the scribe and create a crack. This is referred to as a scribe and break process. The depth of the scribe into the material depends on the thickness of the substrate, what type of material and the die size.
In either case ASMPT’s multi beam technology can be used to create the required depth and width of the scribe with a high productivity and minimal HAZ.
An additional Process flow in which a laser scribe can be used is plasma dicing. In a plasma dicing process step, also referred to as Deep Reactive Ion Etching (DRIE), Si is removed by a plasma process. A DRIE process can not etch other materials such a SiO, polymers or metals, therefore a laser process is needed to remove these top layers prior to applying a DRIE process.