Dicing IR

ASMPT is the inventor of Multi-Beam dicing. With more than 20 years of Multi-Beam laser process experience in high volume manufacturing many billions of parts have been processed. Utilizing the strength of the Multi-Beam process, low power per beam but using many beams to allow high material removal rate with a small (<3um) heat affected zone. The unique slider concept (wafer stepper concept) allows high accuracy and reproducibility. The IR Multi-Beam laser process has proven its value in semiconductor wafer singulations, resulting in the status of PoR for many GaAs products.

Typical values

PoRGaAs
Wafer Thickness< 200 µm
Spot patternMB
Kerf Width< 12 µm

Features & Benefits

Best of class Process Quality
  • High power IR Dicing wavelength 1064µm; pulse length ns range
  • Work horse for GaAs dicing up to 300 µm thickness
  • Die strength enhancement the patented wet etch post process is very effective to enhance side wall quality and burr removal
Production Flexibility
  • Full recipe control for coating, dicing and cleaning
  • Flexibility up to 3 DOE’s (recipe selectable)
Compliant with Production Chain
  • Wafer handling options to convert accurately between 8 and 12“ frames
  • Cassette load station manual, Automated Material Handling System (AMHS)
  • Factory control SECS/GEM interface