ASMPT introduced a new Process of Reference (POR) for Si Mosfets & IGBT’s with high die-strength (800-1000Mpa) outperforming blade. The new POR is in high volume manufacturing at leading Power Semiconductor Manufacturers. We also have developed a V-DOE/ VI-Process dicing technology which allows full cut dicing of Low-K (thin) Si wafers including DAF or FOW while achieving high die strength (450-500Mpa) and low burr (<5µm) with a good quality and low CoO.
The VI process allows customers to dice through the full stack of materials using a single process step. No extra complicated and costly production steps required such as with DBG or other Hybrid dicing technologies. The unique slider concept allows high accuracy and reproducibility.