ASMPT introduced a new Process of Reference (POR) for Si Mosfets & IGBT’s with high die strength (800-1000Mpa) outperforming blade. The new POR is in high volume manufacturing at leading power semiconductor manufacturers. We also have developed a VI-Process which allows full cut dicing of Low-K (thin) Si wafers including DAF or FOW while achieving high die strength (450-500Mpa) and low burr (<5µm) with a good quality and low CoO.
The VI-Process allows customers to dice through the full stack of materials using a single process step. No extra complicated and costly production steps required such as with DBG or other hybrid dicing technologies. The unique slider concept allows high accuracy and reproducibility.